Electrolyte-gated graphene Schottky barrier transistors.
basic_science · Level V
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- Record sourced from PubMed, PMID 26315936.
- Also identified by DOI 10.1002/adma.201502020.
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Abstract
A new device architecture for flexible vertical Schottky barrier (SB) transistors and logic gates based on graphene-organic-semiconductor-metal heterostructures and ion gel gate dielectrics is demonstrated. The devices show well-behaved p- and n-type characteristics under low-voltage operation (<1 V), yielding high current densities (>100 mA cm(-2) ) and on/off current ratios (>10(3) ).