Ultrasensitive Thin-Film-Based Alx Ga1-x N Piezotronic Strain Sensors via Alloying-Enhanced Piezoelectric Potential.
basic_science · Level V
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- Record sourced from PubMed, PMID 26349632.
- Also identified by DOI 10.1002/adma.201502314.
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Abstract
Alx Ga1-x N thin-film-based piezotronic strain sensors with ultrahigh strain sensitivity are fabricated through alloying of AlN with GaN. The strain sensitivity of the ternary compound Alx Ga1-x N is higher than those of the individual binary compounds GaN and AlN. Such a high performance can be attributed to the piezoelectric constant enhancement via intercalation of Al atoms into the GaN matrix, the effect of residual strain, and a suppressed screening effect.