Origin of Noise in Layered MoTe₂ Transistors and its Possible Use for Environmental Sensors.
basic_science · Level V
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- Record sourced from PubMed, PMID 26414685.
- Also identified by DOI 10.1002/adma.201502677.
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Abstract
Low-frequency current fluctuations are monitored and the mechanism of electric noise investigated in layered 2H-type α-molybdenum ditelluride transistors. The charge transport mechanism of electric noise in atomically thin transition-metal dichalcogenides is studied under different environments; the development of a new sensing functionality may be stimulated.