Effects of Contact-Induced Doping on the Behaviors of Organic Photovoltaic Devices.
basic_science · Level V
Where this comes from
- Record sourced from PubMed, PMID 26451625.
- Also identified by DOI 10.1021/acs.nanolett.5b03473.
- No licence information is recorded for this record.
- Because redistribution is not established, this page shows the abstract only. Follow the links below for the full text.
Abstract
Substrates can significantly affect the electronic properties of organic semiconductors. In this paper, we report the effects of contact-induced doping, arising from charge transfer between a high work function hole extraction layer (HEL) and the organic active layer, on organic photovoltaic device performance. Employing a high work function HEL is found to increase doping in the active layer and decrease photocurrent. Combined experimental and modeling investigations reveal that higher doping increases polaron-exciton quenching and carrier recombination within the field-free region. Consequently, there exists an optimal HEL work function that enables a large built-in field while keeping the active layer doping low. This value is found to be ~0.4 eV larger than the pinning level of the active layer material. These understandings establish a criterion for optimal design of the HEL when adapting a new active layer system and can shed light on optimizing performance in other organic electronic devices.