Flexography-Printed In2 O3 Semiconductor Layers for High-Mobility Thin-Film Transistors on Flexible Plastic Substrate.
basic_science · Level V
Where this comes from
- Record sourced from PubMed, PMID 26456380.
- Also identified by DOI 10.1002/adma.201502569.
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Abstract
Industrially scalable and roll-to-roll-compatible fabrication methods are utilized to fabricate high-mobility (≈8 cm(2) V(-1) s(-1) ) nanocrystalline In2 O3 thin-film transistors (TFTs) on an flexible plastic substrate. Flexographic printing of multiple thin In2 O3 semiconductor layers from precursor-solution is performed on a Al2 O3 gate dielectric obtained via atomic layer deposition. A low-temperature post-contact-annealing step allows control of the TFT device turn-on voltage to ≈0 V for enhancement-mode operation.
Medical subject headings
- Indium
- Mechanical Phenomena
- Plastics
- Printing
- Transistors, Electronic