Band Bending Inversion in Bi2Se3 Nanostructures.
basic_science · Level V
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- Record sourced from PubMed, PMID 26479681.
- Also identified by DOI 10.1021/acs.nanolett.5b03124.
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Abstract
Shubnikov-de Haas oscillations were studied under high magnetic field in Bi2Se3 nanostructures grown by chemical vapor transport, for different bulk carrier densities ranging from 3 × 10(19) cm(-3) to 6 × 10(17) cm(-3). The contribution of topological surface states to electrical transport can be identified and separated from bulk carriers and massive two-dimensional electron gas. Band bending is investigated, and a crossover from upward to downward band bending is found at low bulk density as a result of a competition between bulk and interface doping. These results highlight the need to control electrical doping both in the bulk and at interfaces in order to study only topological surface states.