Temperature Tunable Self-Doping in Stable Diradicaloid Thin-Film Devices.
basic_science · Level V
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- Record sourced from PubMed, PMID 26485538.
- Also identified by DOI 10.1002/adma.201502404.
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Abstract
FDT and FDT-Br diradicaloids with stable coexisting close-shell and open-shell forms exhibit unconventional self-doping behavior in solid-state electronic devices that is temperature (T) tunable and reversible. The doping is strengthened by the increased T, leading to the absence of off-states (I(off)) in the transistors.