Ultrasensitive Phototransistors Based on Few-Layered HfS2.
basic_science · Level V
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- Record sourced from PubMed, PMID 26497945.
- Also identified by DOI 10.1002/adma.201503864.
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Abstract
An ultrathin HfS2 -based ultrasensitive phototransistor is systematically studied. Au-contacted HfS2 phototransistors with ideal thickness ranging from 7 to 12 nm exhibit a high on/off ratio of ca. 10(7) , ultrahigh photoresponsivity over 890 A W(-1) , and photogain over 2300. Moreover, the response time is strongly dependent on the back-gate voltage and shows a reverse trend for Au and Cr metals.