On the Extraction of Charge Carrier Mobility in High-Mobility Organic Transistors.
basic_science · Level V
Where this comes from
- Record sourced from PubMed, PMID 26542747.
- Also identified by DOI 10.1002/adma.201503133.
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Abstract
Transistor parameter extraction by the conventional transconductance method can lead to a mobility overestimate. Organic transistors undergoing major contact resistance experience a significant drop in mobility upon mild annealing. Before annealing, strong field-dependent contact resistance yields nonlinear transfer curves with locally high transconductances, resulting in a mobility overestimate. After annealing, a contact resistance below 200 Ω cm is achieved, which is stable over a wide V(G) range.