Extreme Sensitivity of Room-Temperature Photoelectric Effect for Terahertz Detection.
basic_science · Level V
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- Record sourced from PubMed, PMID 26542882.
- Also identified by DOI 10.1002/adma.201503350.
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Abstract
Extreme sensitivity of room-temperature photoelectric effect for terahertz (THz) detection is demonstrated by generating extra carriers in an electromagnetic induced well located at the semiconductor, using a wrapped metal-semiconductor-metal configuration. The excellent performance achieved with THz detectors shows great potential to open avenues for THz detection.