Bent Ferroelectric Domain Walls as Reconfigurable Metallic-Like Channels.
basic_science · Level V
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- Record sourced from PubMed, PMID 26555142.
- Also identified by DOI 10.1021/acs.nanolett.5b03450.
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Abstract
Use of ferroelectric domain-walls in future electronics requires that they are stable, rewritable conducting channels. Here we demonstrate nonthermally activated metallic-like conduction in nominally uncharged, bent, rewritable ferroelectric-ferroelastic domain-walls of the ubiquitous ferroelectric Pb(Zr,Ti)O3 using scanning force microscopy down to a temperature of 4 K. New walls created at 4 K by pressure exhibit similar robust and intrinsic conductivity. Atomic resolution electron energy-loss spectroscopy confirms the conductivity confinement at the wall. This work provides a new concept in "domain-wall nanoelectronics".