Site Selective Doping of Ultrathin Metal Dichalcogenides by Laser-Assisted Reaction.
basic_science · Level V
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- Record sourced from PubMed, PMID 26567761.
- Also identified by DOI 10.1002/adma.201503945.
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Abstract
Laser-assisted phosphorus doping is demonstrated on ultrathin transition-metal dichalcogenides (TMDCs) including n-type MoS2 and p-type WSe2 . Temporal and spatial control of the doping is achieved by varying the laser irradiation power and time, demonstrating wide tunability and high site selectivity with high stability. The laser-assisted doping method may enable a new avenue for functionalizing TMDCs for customized nanodevice applications.