Trilayer Tunnel Selectors for Memristor Memory Cells.
basic_science · Level V
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- Record sourced from PubMed, PMID 26584142.
- Also identified by DOI 10.1002/adma.201503604 and PMC identifier 4737268.
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Abstract
An integrated memory cell with a mem-ristor and a trilayer crested barrier selector, showing repeatable nonlinear current-voltage switching loops is presented. The fully atomic-layer-deposited TaN1+x /Ta2 O5 /TaN1+x crested barrier selector yields a large nonlinearity (>10(4) ), high endurance (>10(8) ), low variability, and low temperature dependence.