Doping-Induced Carrier Density Modulation in Polymer Field-Effect Transistors.
basic_science · Level V
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- Record sourced from PubMed, PMID 26585873.
- Also identified by DOI 10.1002/adma.201504307.
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Abstract
Controlled device parameters of high-mobility polymer field-effect transistors (FETs) are demonstrated by modest doping and charge compensation. Through fleeting chemical vapor treatments of aligned poly[4-(4,4-dihexadecyl-4H-cyclopenta[1,2-b:5,4-b']dithiophen-2-yl)-alt-[1,2,5]thiadiazolo-[3,4-c]pyridine] (PCDTPT) thin films as the charge transport layer in the FET channel, the FET properties are tailored by controlling doping concentration of the PCDTPT adjacent to metal electrodes.