Rational Design of Ultralarge Pb1-x Snx Te Nanoplates for Exploring Crystalline Symmetry-Protected Topological Transport.
basic_science · Level V
Where this comes from
- Record sourced from PubMed, PMID 26618500.
- Also identified by DOI 10.1002/adma.201504630.
- No licence information is recorded for this record.
- Because redistribution is not established, this page shows the abstract only. Follow the links below for the full text.
Abstract
Ultralarge topological crystalline insulator Pb1-x Snx Te nanoplates are developed by controlling substrate surface chemical properties in a cost-efficient chemical vapor deposition (CVD) process. Dominant topological surface transport is demonstrated by a gate-voltage-controlled weak (anti)localization effect, indicating the potential application of these nanoplates to low-dissipation topological transistors.