Low Leakage-Current InAsSb Nanowire Photodetectors on Silicon.
basic_science · Level V
Where this comes from
- Record sourced from PubMed, PMID 26675242.
- Also identified by DOI 10.1021/acs.nanolett.5b03449.
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Abstract
Axially doped p-i-n InAs0.93Sb0.07 nanowire arrays have been grown on Si substrates and fabricated into photodetectors for shortwave infrared detection. The devices exhibit a leakage current density around 2 mA/cm(2) and a 20% cutoff of 2.3 μm at 300 K. This record low leakage current density for InAsSb based devices demonstrates the suitability of nanowires for the integration of III-V semiconductors with silicon technology.
Medical subject headings
- Nanowires
- Semiconductors
- Silicon