Large-Area Monolayer MoS2 for Flexible Low-Power RF Nanoelectronics in the GHz Regime.
basic_science · Level V
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- Record sourced from PubMed, PMID 26707841.
- Also identified by DOI 10.1002/adma.201504309.
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Abstract
Flexible synthesized MoS2 transistors are advanced to perform at GHz speeds. An intrinsic cutoff frequency of 5.6 GHz is achieved and analog circuits are realized. Devices are mechanically robust for 10,000 bending cycles.