Observation of Strong Interlayer Coupling in MoS2/WS2 Heterostructures.
basic_science · Level V
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- Record sourced from PubMed, PMID 26708256.
- Also identified by DOI 10.1002/adma.201504631.
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Abstract
Epitaxial growth of A-A and A-B stacking MoS2 on WS2 via a two-step chemical vapor deposition method is reported. These epitaxial heterostructures show an atomic clean interface and a strong interlayer coupling, as evidenced by systematic characterization. Low-frequency Raman breathing and shear modes are observed in commensurate stacking bilayers for the first time; these can serve as persuasive fingerprints for interfacial quality and stacking configurations.