Minimizing Self-Heating and Heat Dissipation in Ultrascaled Nanowire Transistors.
basic_science · Level V
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- Record sourced from PubMed, PMID 26729346.
- Also identified by DOI 10.1021/acs.nanolett.5b04071.
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Abstract
Through advanced electro-thermal simulations we demonstrate that self-heating effects play a significant role in ultrascaled nanowire field-effect transistors, that some crystal orientations are less favorable than others (⟨111⟩ for n-type applications, ⟨100⟩ for p-type ones), and that Ge might outperform Si at this scale. We further establish a relationship between the dissipated power and the electrical mobility and another one between the current reduction induced by self-heating and the phonon thermal conductivity.