Twin-Induced InSb Nanosails: A Convenient High Mobility Quantum System.
basic_science · Level V
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- Record sourced from PubMed, PMID 26733426.
- Also identified by DOI 10.1021/acs.nanolett.5b05125.
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Abstract
Ultra narrow bandgap III-V semiconductor nanomaterials provide a unique platform for realizing advanced nanoelectronics, thermoelectrics, infrared photodetection, and quantum transport physics. In this work we employ molecular beam epitaxy to synthesize novel nanosheet-like InSb nanostructures exhibiting superior electronic performance. Through careful morphological and crystallographic characterization we show how this unique geometry is the result of a single twinning event in an otherwise pure zinc blende structure. Four-terminal electrical measurements performed in both the Hall and van der Pauw configurations reveal a room temperature electron mobility greater than 12,000 cm(2)·V(-1)·s(-1). Quantized conductance in a quantum point contact processed with a split-gate configuration is also demonstrated. We thus introduce InSb "nanosails" as a versatile and convenient platform for realizing new device and physics experiments with a strong interplay between electronic and spin degrees of freedom.