Quantum Dot-Like Behavior of Compositional Fluctuations in AlGaN Nanowires.
basic_science · Level V
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- Record sourced from PubMed, PMID 26785291.
- Also identified by DOI 10.1021/acs.nanolett.5b03904.
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Abstract
We report on the structural and optical properties of AlxGa(1-x)N nanowire sections grown by plasma-assisted molecular beam epitaxy on GaN nanowire bases used as a template. Based on a combination of scanning electron microscopy, microphotoluminescence, time-resolved microphotoluminescence, and photon correlation experiments, it is shown that compositional fluctuations in AlxGa(1-x)N sections associated with carrier localization optically behave as quantum dots. Moreover, most of the micro-optical properties of such fluctuations are demonstrated to be very little dependent on kinetic growth parameters such as AlxGa(1-x)N growth temperature and AlN molar fraction in the alloy, which govern the macrostructural properties of AlxGa(1-x)N sections.
Medical subject headings
- Aluminum Compounds
- Gallium
- Nanowires
- Quantum Dots