Monolithic 3D CMOS Using Layered Semiconductors.
basic_science · Level V
Where this comes from
- Record sourced from PubMed, PMID 26833783.
- Also identified by DOI 10.1002/adma.201505113.
- No licence information is recorded for this record.
- Because redistribution is not established, this page shows the abstract only. Follow the links below for the full text.
Abstract
Monolithic 3D integrated circuits using transition metal dichalcogenide materials and low-temperature processing are reported. A variety of digital and analog circuits are implemented on two sequentially integrated layers of devices. Inverter circuit operation at an ultralow supply voltage of 150 mV is achieved, paving the way to high-density, ultralow-voltage, and ultralow-power applications.