Direct Observation of Localized Radial Oxygen Migration in Functioning Tantalum Oxide Memristors.

Kumar, Suhas; Graves, Catherine E; Strachan, John Paul; Grafals, Emmanuelle Merced; Kilcoyne, Arthur L David; Tyliszczak, Tolek; Weker, Johanna Nelson; Nishi, Yoshio et al. · Adv Mater · 2016

basic_science · Level V

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Record sourced from PubMed, PMID 26833926.
Also identified by DOI 10.1002/adma.201505435.
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Abstract

Oxygen migration in tantalum oxide, a promising next-generation storage material, is studied using in operando X-ray absorption spectromicroscopy. This approach allows a physical description of the evolution of conduction channel and eventual device failure. The observed ring-like patterns of oxygen concentration are modeled using thermophoretic forces and Fick diffusion, establishing the critical role of temperature-driven oxygen migration.

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