Phase-Change Memory Materials by Design: A Strain Engineering Approach.
basic_science · Level V
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- Record sourced from PubMed, PMID 26854333.
- Also identified by DOI 10.1002/adma.201505865.
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Abstract
Van der Waals heterostructure superlattices of Sb2 Te1 and GeTe are strain-engineered to promote switchable atomic disordering, which is confined to the GeTe layer. Careful control of the strain in the structures presents a new degree of freedom to design the properties of functional superlattice structures for data storage and photonics applications.