p-Type MoS2 and n-Type ZnO Diode and Its Performance Enhancement by the Piezophototronic Effect.
basic_science · Level V
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- Record sourced from PubMed, PMID 26936489.
- Also identified by DOI 10.1002/adma.201506472.
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Abstract
A plasma-induced p-type MoS2 flake and n-type ZnO film diode, which exhibits an excellent rectification ratio, is demonstrated. Under 365 nm optical irradiation, this p-n diode shows a strong photoresponse with an external quantum efficiency of 52.7% and a response time of 66 ms. By increasing the pressure on the junction to 23 MPa, the photocurrent can be enhanced by a factor of four through the piezophototronic effect.