An Organic Vertical Field-Effect Transistor with Underside-Doped Graphene Electrodes.
basic_science · Level V
Where this comes from
- Record sourced from PubMed, PMID 27071794.
- Also identified by DOI 10.1002/adma.201505378.
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Abstract
High-performance vertical field-effect transistors are developed, which are based on graphene electrodes doped using the underside doping method. The underside doping method enables effective tuning of the graphene work function while maintaining the surface properties of the pristine graphene.