Tellurium-Assisted Epitaxial Growth of Large-Area, Highly Crystalline ReS2 Atomic Layers on Mica Substrate.
basic_science · Level V
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- Record sourced from PubMed, PMID 27121002.
- Also identified by DOI 10.1002/adma.201600722.
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Abstract
Anisotropic 2D layered material rhenium disulfide (ReS2 ) with high crystal quality and uniform monolayer thickness is synthesized by using tellurium-assisted epitaxial growth on mica substrate. Benefit from the lower eutectic temperature of rhenium-tellurium binary eutectic, ReS2 can grow from rhenium (melting point at 3180 °C) and sulfur precursors in the temperature range of 460-900 °C with high efficiency.