Layer Engineering of 2D Semiconductor Junctions.
basic_science · Level V
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- Record sourced from PubMed, PMID 27136275.
- Also identified by DOI 10.1002/adma.201600278.
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Abstract
A new concept for junction fabrication by connecting multiple regions with varying layer thicknesses, based on the thickness dependence, is demonstrated. This type of junction is only possible in super-thin-layered 2D materials, and exhibits similar characteristics as p-n junctions. Rectification and photovoltaic effects are observed in chemically homogeneous MoSe2 junctions between domains of different thicknesses.