Electron Mobility Exceeding 10 cm(2) V(-1) s(-1) and Band-Like Charge Transport in Solution-Processed n-Channel Organic Thin-Film Transistors.

Xu, Xiaomin; Yao, Yifan; Shan, Bowen; Gu, Xiao; Liu, Danqing; Liu, Jinyu; Xu, Jianbin; Zhao, Ni et al. · Adv Mater · 2016

basic_science · Level V

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Abstract

Solution-processed n-channel organic thin-film transistors (OTFTs) that exhibit a field-effect mobility as high as 11 cm(2) V(-1) s(-1) at room temperature and a band-like temperature dependence of electron mobility are reported. By comparison of solution-processed OTFTs with vacuum-deposited OTFTs of the same organic semiconductor, it is found that grain boundaries are a key factor inhibiting band-like charge transport.