Facet-Independent Electric-Field-Induced Volume Metallization of Tungsten Trioxide Films.
basic_science · Level V
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- Record sourced from PubMed, PMID 27159503.
- Also identified by DOI 10.1002/adma.201505631.
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Abstract
Reversible metallization of band and Mott insulators by ionic-liquid gating is accompanied by significant structural changes. A change in conductivity of seven orders of magnitude at room temperature is found in epitaxial films of WO3 with an associated monoclinic-to-cubic structural reorganization. The migration of oxygen ions along open volume channels is the underlying mechanism.