Giant Resistive Switching via Control of Ferroelectric Charged Domain Walls.
basic_science · Level V
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- Record sourced from PubMed, PMID 27213756.
- Also identified by DOI 10.1002/adma.201600160.
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Abstract
Controlled switching of resistivity in ferroelectric thin films is demonstrated by writing and erasing stable, nanoscale, strongly charged domain walls using an in situ transmission electron microscopy technique. The resistance can be read nondestructively and presents the largest off/on ratio (≈10(5) ) ever reported in room-temperature ferroelectric devices, opening new avenues for engineering ferroelectric thin-film devices.