Resistive Switching in All-Oxide Ferroelectric Tunnel Junctions with Ionic Interfaces.

Qin, Qi Hang; Äkäslompolo, Laura; Tuomisto, Noora; Yao, Lide; Majumdar, Sayani; Vijayakumar, Jaianth; Casiraghi, Arianna; Inkinen, Sampo et al. · Adv Mater · 2016

basic_science · Level V

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Record sourced from PubMed, PMID 27248832.
Also identified by DOI 10.1002/adma.201504519.
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Abstract

Universal, giant and nonvolatile resistive switching is demonstrated for oxide tunnel junctions with ferroelectric PbZr0.2 Ti0.8 O3 , ferroelectric BaTiO3, and paraelectric SrTiO3 tunnel barriers. The effects are caused by reversible migration of oxygen vacancies between the tunnel barrier and bottom La2/3 Sr1/3 MnO3 electrode. The switching process, which is driven by large electric fields, is efficient down to a temperature of 5 K.

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