Bipolar Junction Transistors in Two-Dimensional WSe2 with Large Current and Photocurrent Gains.
basic_science · Level V
Where this comes from
- Record sourced from PubMed, PMID 27336742.
- Also identified by DOI 10.1021/acs.nanolett.6b01444.
- No licence information is recorded for this record.
- Because redistribution is not established, this page shows the abstract only. Follow the links below for the full text.
Abstract
In the development of semiconductor devices, the bipolar junction transistor (BJT) features prominently as being the first solid state transistor that helped to usher in the digital revolution. For any new semiconductor, therefore, the fabrication and characterization of the BJT are important for both technological importance and historical significance. Here, we demonstrate a BJT device in exfoliated TMD semiconductor WSe2. We use buried gates to electrostatically create doped regions with back-to-back p-n junctions. We demonstrate two central characteristics of a bipolar device: current gain when operated as a BJT and a photocurrent gain when operated as a phototransistor. We demonstrate a current gain of 1000 and photocurrent gain of 40 and describe features that enhance these properties due to the doping technique that we employ.