Efficient Low-Temperature Solution-Processed Lead-Free Perovskite Infrared Light-Emitting Diodes.
basic_science · Level V
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- Record sourced from PubMed, PMID 27376676.
- Also identified by DOI 10.1002/adma.201601024.
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Abstract
Lead-free perovskite infrared light-emitting diodes are achieved by using a halide perovskite CsSnI<sub>3</sub> as an emissive layer. The film shows compact micrometer-sized grains with only a few pinholes and cracks at the grain boundaries. The device exhibits maximum radiance of 40 W sr<sup>-1</sup> m<sup>-2</sup> at a current density of 364.3 mA cm<sup>-2</sup> and maximum external quantum efficiency of 3.8% at 4.5 V.