High-Output-Power Ultraviolet Light Source from Quasi-2D GaN Quantum Structure.
basic_science · Level V
Where this comes from
- Record sourced from PubMed, PMID 27383739.
- Also identified by DOI 10.1002/adma.201600990.
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Abstract
Quasi-2D GaN layers inserted in an AlGaN matrix are proposed as a novel active region to develop a high-output-power UV light source. Such a structure is successfully achieved by precise control in molecular beam epitaxy and shows an amazing output power of ≈160 mW at 285 nm with a pulsed electron-beam excitation. This device is promising and competitive in non-line-of-sight communications or the sterilization field.