Isoelectronic Tungsten Doping in Monolayer MoSe<sub>2</sub> for Carrier Type Modulation.
basic_science · Level V
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- Record sourced from PubMed, PMID 27384240.
- Also identified by DOI 10.1002/adma.201601991.
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Abstract
Carrier-type modulation is demonstrated in 2D transition metal dichalcogenides as n-type monolayer MoSe<sub>2</sub> is converted to nondegenerate p-type monolayer Mo<sub>1-</sub><sub>x</sub> W<sub>x</sub> Se<sub>2</sub> through isoelectronic doping. Although the alloys are mesoscopically uniform, the p-type conduction in monolayer Mo<sub>1-</sub><sub>x</sub> W<sub>x</sub> Se<sub>2</sub> appears to originate from the upshift of the valenceband maximum toward the Fermi level at highly localized "W-rich" regions in the lattice.