High Mobility MoS<sub>2</sub> Transistor with Low Schottky Barrier Contact by Using Atomic Thick h-BN as a Tunneling Layer.
basic_science · Level V
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- Record sourced from PubMed, PMID 27387603.
- Also identified by DOI 10.1002/adma.201602757.
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Abstract
High-performance MoS<sub>2</sub> transistors are developed using atomic hexagonal boron nitride as a tunneling layer to reduce the Schottky barrier and achieve low contact resistance between metal and MoS<sub>2</sub> . Benefiting from the ultrathin tunneling layer within 0.6 nm, the Schottky barrier is significantly reduced from 158 to 31 meV with small tunneling resistance.