Mass Production of Nanogap Electrodes toward Robust Resistive Random Access Memory.
basic_science · Level V
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- Record sourced from PubMed, PMID 27435803.
- Also identified by DOI 10.1002/adma.201603124.
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Abstract
Nanogap electrodes arrays are fabricated by combining atomic layer deposition, adhesive tape, and chemical etching. A unipolar nonvolatile resistive-switching behavior is identified in the nanogap electrodes, showing stable, robust performance and the multibit storage ability, demonstrating great potential in ultrahigh-density storage. The formation and dissolution of Si conductive filaments and migration of Au atoms is the mechanism behind the resistive switching.