Piezophototronic Effect in Single-Atomic-Layer MoS<sub>2</sub> for Strain-Gated Flexible Optoelectronics.
basic_science · Level V
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- Record sourced from PubMed, PMID 27486923.
- Also identified by DOI 10.1002/adma.201602854.
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Abstract
Strain-gated flexible optoelectronics are reported based on monolayer MoS<sub>2</sub> . Utilizing the piezoelectric polarization created at the metal-MoS<sub>2</sub> interface to modulate the separation/transport of photogenerated carriers, the piezophototronic effect is applied to implement atomic-layer-thick phototransistor. Coupling between piezoelectricity and photogenerated carriers may enable the development of novel optoelectronics.