Recent Advances in Doping of Molybdenum Disulfide: Industrial Applications and Future Prospects.
review · Level V
Where this comes from
- Record sourced from PubMed, PMID 27500380.
- Also identified by DOI 10.1002/adma.201506402.
- No licence information is recorded for this record.
- Because redistribution is not established, this page shows the abstract only. Follow the links below for the full text.
Abstract
Owing to their excellent physical properties, atomically thin layers of molybdenum disulfide (MoS<sub>2</sub> ) have recently attracted much attention due to their nonzero-gap property, exceptionally high electrical conductivity, good thermal stability, and excellent mechanical strength, etc. MoS<sub>2</sub> -based devices exhibit great potential for applications in optoelectronics and energy harvesting. Here, a comprehensive review of various doping strategies is presented, including wet doping and dry doping of atomically crystalline MoS<sub>2</sub> thin layers, and the progress made so far for their doping-based prospective applications is also discussed. Finally, several significant research issues for the prospects of doped-MoS<sub>2</sub> in industry, as a guide for 2D material community, are also provided.