Contact Resistance Effects in Highly Doped Organic Electrochemical Transistors.
basic_science · Level V
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- Record sourced from PubMed, PMID 27511804.
- Also identified by DOI 10.1002/adma.201602125.
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Abstract
Injection at the source contact critically determines the behavior of depletion-type organic electrochemical transistors (OETs). The contact resistance of OETs increases exponentially with the gate voltage and strongly influences the modulation of the drain current by the gate voltage over a wide voltage range. A modified standard model accounting contact resistance can explain the particular shape of the transconductance.