Multibit MoS<sub>2</sub> Photoelectronic Memory with Ultrahigh Sensitivity.
basic_science · Level V
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- Record sourced from PubMed, PMID 27562539.
- Also identified by DOI 10.1002/adma.201603571.
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Abstract
A novel multibit MoS<sub>2</sub> photoelectronic nonvolatile memory device is developed by synergistically combining rational device designs and the efficient transfer of large-area MoS<sub>2</sub> flakes. The MoS<sub>2</sub> photoelectronic memory exhibits excellent memory characteristics, including a large programming/erasing current ratio that exceeds 10<sup>7</sup> , multilevel data storage of 3 bits (corresponding to eight levels), performance stability over 200 cycles, and stable data retention over 10<sup>4</sup> s.