Hybrid van der Waals p-n Heterojunctions based on SnO and 2D MoS<sub>2</sub>.
basic_science · Level V
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- Record sourced from PubMed, PMID 27571871.
- Also identified by DOI 10.1002/adma.201602157.
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Abstract
A p-type oxide/2D hybrid van der Waals p-n heterojunction is demonstrated for the first time between SnO (tin monoxide) (the p-type oxide) and 2D MoS<sub>2</sub> (molybdenum disulfide), showing an ideality factor of 2 and rectification ratio up to 10<sup>4</sup> . The reported heterojunction is gate-tunable with typical anti-ambipolar transfer characteristics. Surface potential mapping is performed and a current model for such a heterojunction is proposed.