Te-Doped Black Phosphorus Field-Effect Transistors.
basic_science · Level V
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- Record sourced from PubMed, PMID 27594417.
- Also identified by DOI 10.1002/adma.201603723.
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Abstract
Element doping allows manipulation of the electronic properties of 2D materials. Enhanced transport performances and ambient stability of black-phosphorus devices by Te doping are presented. This provides a facile route for achieving airstable black-phosphorus devices.