Indirect Bandgap Puddles in Monolayer MoS<sub>2</sub> by Substrate-Induced Local Strain.
basic_science · Level V
Where this comes from
- Record sourced from PubMed, PMID 27601145.
- Also identified by DOI 10.1002/adma.201602626.
- No licence information is recorded for this record.
- Because redistribution is not established, this page shows the abstract only. Follow the links below for the full text.
Abstract
An unusually large bandgap modulation of 1.23-2.65 eV in monolayer MoS<sub>2</sub> on a SiO<sub>2</sub> /Si substrate is found due to the inherent local bending strain induced by the surface roughness of the substrate, reaching the direct-to-indirect bandgap transition. Approximately 80% of the surface area reveals an indirect bandgap, which is confirmed further by the degraded photoluminescence compared to that from suspended MoS<sub>2</sub> .