Solution-Processed Organic-Inorganic Perovskite Field-Effect Transistors with High Hole Mobilities.
basic_science · Level V
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- Record sourced from PubMed, PMID 27605061.
- Also identified by DOI 10.1002/adma.201603126.
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Abstract
A very high hole mobility of 15 cm<sup>2</sup> V<sup>-1</sup> s<sup>-1</sup> along with negligible hysteresis are demonstrated in transistors with an organic-inorganic perovskite semiconductor. This high mobility results from the well-developed perovskite crystallites, improved conversion to perovskite, reduced hole trap density, and improved hole injection by employing a top-contact/top-gate structure with surface treatment and MoO<sub>x</sub> hole-injection layers.