Statistically Analyzed Photoresponse of Elastically Bent CdS Nanowires Probed by Light-Compatible In Situ High-Resolution TEM.
basic_science · Level V
Where this comes from
- Record sourced from PubMed, PMID 27606954.
- No licence information is recorded for this record.
- Because redistribution is not established, this page shows the abstract only. Follow the links below for the full text.
Abstract
We demonstrate that high resolution transmission electron microscopy (HRTEM) paired with light illumination of a sample and its electrical probing can be utilized for the in situ study of initiated photocurrents in free-standing nanowires. Morphology, phase and crystallographic information from numerous individual CdS nanowires is obtained simultaneously with photocurrent measurements. Our results indicate that elastically bent CdS nanowires possessing a wurtzite structure show statistically unchanged values of ON/OFF (photocurrent/dark current) ratios. Photocurrent spectroscopy reveals red shifts of several nanometers in the cutoff wavelength after nanowire bending. This results from deformation-induced lattice strain and associated changes in the nanowire band structure, as confirmed by selected area electron diffraction (SAED) analyses and density functional tight binding (DFTB) simulations. The ON/OFF ratio stabilities and photocurrent spectroscopy shift of bent CdS nanowires are important clues for future flexible electronics, optoelectronics, and photovoltaics.