Gate-Tunable Hole and Electron Carrier Transport in Atomically Thin Dual-Channel WSe<sub>2</sub> /MoS<sub>2</sub> Heterostructure for Ambipolar Field-Effect Transistors.
basic_science · Level V
Where this comes from
- Record sourced from PubMed, PMID 27619888.
- Also identified by DOI 10.1002/adma.201601949.
- No licence information is recorded for this record.
- Because redistribution is not established, this page shows the abstract only. Follow the links below for the full text.
Abstract
An ambipolar dual-channel field-effect transistor (FET) with a WSe<sub>2</sub> /MoS<sub>2</sub> heterostructure formed by separately controlled individual channel layers is demonstrated. The FET shows a switchable ambipolar behavior with independent carrier transport of electrons and holes in the individual layers of MoS<sub>2</sub> and WSe<sub>2</sub> , respectively. Moreover, the photoresponse is studied at the heterointerface of the WSe<sub>2</sub> /MoS<sub>2</sub> dual-channel FET.