Transition-Metal Substitution Doping in Synthetic Atomically Thin Semiconductors.
basic_science · Level V
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- Record sourced from PubMed, PMID 27646967.
- Also identified by DOI 10.1002/adma.201601104.
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Abstract
Large-area "in situ" transition-metal substitution doping for chemical-vapor-deposited semiconducting transition-metal-dichalcogenide monolayers deposited on dielectric substrates is demonstrated. In this approach, the transition-metal substitution is stable and preserves the monolayer's semiconducting nature, along with other attractive characteristics, including direct-bandgap photoluminescence.