High-Performance Hybrid Electronic Devices from Layered PtSe<sub>2</sub> Films Grown at Low Temperature.
basic_science · Level V
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- Record sourced from PubMed, PMID 27661979.
- Also identified by DOI 10.1021/acsnano.6b04898.
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Abstract
Layered two-dimensional (2D) materials display great potential for a range of applications, particularly in electronics. We report the large-scale synthesis of thin films of platinum diselenide (PtSe<sub>2</sub>), a thus far scarcely investigated transition metal dichalcogenide. Importantly, the synthesis by thermally assisted conversion is performed at 400 °C, representing a breakthrough for the direct integration of this material with silicon (Si) technology. Besides the thorough characterization of this 2D material, we demonstrate its promise for applications in high-performance gas sensing with extremely short response and recovery times observed due to the 2D nature of the films. Furthermore, we realized vertically stacked heterostructures of PtSe<sub>2</sub> on Si which act as both photodiodes and photovoltaic cells. Thus, this study establishes PtSe<sub>2</sub> as a potential candidate for next-generation sensors and (opto-)electronic devices, using fabrication protocols compatible with established Si technologies.